MMBTSC2787 Datasheet, PDF (3/5 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC2787
Total power dissipation vs.
ambient temperature
350
In free air
300
250
200
150
100
50
0
25 50 75 100 125 150
Ambient temperature ( C)
Collector current vs.
base emitter voltage
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1 1.2
VBE,V
DC current gain vs.
collector emitter voltage
IC=1mA
500
200
100
50
20
10
12
5 10 20 ₅₀
VCE, V
Collector current vs.
collector emitter voltage
10
8
70
6
60
50
40
4
30
20
2
IB=10 A
0
4
8
12
16
20
VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE= 6V
200
100
50
20
10
0.1 0.2 0.5 1 2 5 10 20
100
I C, mA
Gain bandwidth product
vs. emitter current
1000
VCE= 6V
500
200
100
50
20
10
-0.1
-1
I E, mA
-10 -20
-100
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005