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STBT134T Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – TRIAC
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ST BT134T
Characteristics at TJ = 25 OC
Parameter
Gate Trigger Current
at VD = 12 V, IT = 0.1 A
Latching Current
at VD = 12 V, IGT = 0.1 A
Holding Current
at VD = 12 V, IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
On State Voltage
at IT = 5 A
Gate Trigger Voltage
at VD = 12 V, IT = 0.1 A
at VD = 400 V, IT = 0.1 A, TJ = 125 OC
Off State Leakage Current
at VD = max, VDRM = max, TJ = 125 OC
Critical Rate of Rise of Off State Voltage
at VDM = 67% VDRM max, TJ = 125 OC, exponential
waveform, gate open circuit
Critical Rate of Change of Commutating Voltage
at VDM = 400 V, TJ = 95 OC, IT(RMS) = 4 A,
dIcom/dt = 1.8 A/ms, gate open circuit
Gate Controlled Turn On Time
at ITM = 6 A, VD = VDRM max, IG = 0.1 A,
dIG/dt = 5 A/µs,
Thermal Resistance
Parameter
Junction to Mounting Base
Junction to Ambient (typical)
Full Cycle
Half Cycle
In Free Air
Symbol Min.
Typ. Max. Unit
IGT
-
-
-
-
-
-
35
35
mA
-
35
-
70
IL
-
-
-
-
IH
-
VT
-
-
-
20
30
mA
-
20
-
30
-
15
mA
-
1.7
V
VGT
-
-
1.5
V
0.25
-
-
ID
-
-
0.5
mA
dVD/dt
100
250
-
V/µs
dVcom/dt
-
50
-
V/µs
tgt
-
2
-
µs
Symbol
Rth(j-mb)
Rth(j-a)
Value
3
3.7
100 (Typ.)
Unit
K/W
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/04/2006