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| ST2N3704 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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ST 2N3704
Characteristics at Tamb=25â
DC Current Gain
at VCE=2V, IC=50mA
Collector Base Breakdown Voltage
at IC=100μA
Collector Emitter Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=100μA
Collector Cutoff Current
at VCB=20V
Emitter Cutoff Current
at VBE=3V
Output Capacitance
at VCB=10V, f=1MHz
Collector Emitter Saturation Voltage
at IC=100mA, IB=5mA
Base Emitter On Voltage
at VCE=2V, IC=100mA
Current Gain Bandwidth Product
at VCE=2V, IC=50mA, f=20MHz
Symbol
*hFE
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
Cob
*VCE(sat)
*VBE(on)
fT
Min.
100
50
30
5
-
-
-
-
0.5
100
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
300
-
-
-
100
100
12
0.6
1
-
Unit
-
V
V
V
nA
nA
pF
V
V
MHz
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/04/2005
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