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| ST2N2907 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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ST 2N2907 / 2N2907A
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at -IC = 0.1 mA, -VCE = 10 V
at -IC = 1 mA, -VCE = 10 V
at -IC = 10 mA, -VCE = 10 V
at -IC = 150 mA, -VCE = 10 V
at -IC = 500 mA, -VCE = 10 V
ST 2N2907
hFE
35
ST 2N2907A
hFE
75
ST 2N2907
hFE
50
ST 2N2907A
hFE
100
ST 2N2907
hFE
75
ST 2N2907A
hFE
100
hFE
100
ST 2N2907
hFE
30
ST 2N2907A
hFE
50
Collector Cutoff Current
at -VCB = 50 V
ST 2N2907
-ICBO
-
ST 2N2907A
-ICBO
-
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
60
Collector Emitter Breakdown Voltage
at -IC = 10 mA
ST 2N2907
-V(BR)CEO
40
ST 2N2907A -V(BR)CEO
60
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
Collector Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
-VCE(sat)
-
Base Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
-VBE(sat)
-
-VBE(sat)
-
Gain Bandwidth Product
at -IC = 50 mA , -VCE = 20 V, f = 100 MHz
fT
200
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
Input Capacitance
at -VBE = 2 V, f = 1 MHz
Cib
-
Max.
-
-
-
-
-
-
300
-
-
20
10
-
-
-
-
0.4
1.6
1.3
2.6
-
8
30
Unit
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005
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