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| MMDT5110W Datasheet, PDF (2/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Digital Transistor | |||
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MMDT5110Wâ¦MMDT511ZW
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 10 V, -IC = 5 mA
MMDT5118/511L/511VW
20
-
-
-
MMDT5119/511D/511F/511HW
30
-
-
-
MMDT5111W
35
-
-
-
MMDT5112/511EW
hFE
60
-
-
-
MMDT511ZW
60
-
200
-
MMDT5113/5114/511MW
80
-
-
-
MMDT511N/511TW
MMDT5110/5115/5116/5117W 1)
80
-
400
-
160
-
460
-
Collector Base Cutoff Current
at -VCB = 50 V
-ICBO
-
Emitter Base Cutoff Current
at -VEB = 6 V
MMDT5110/5115/5116/5117W
-
MMDT5113W
-
MMDT5112/5114/511D/511E/511M/511N/511TW
-
MMDT511ZW
MMDT5111W
-IEBO
-
-
MMDT511F/511HW
-
MMDT5119W
-
MMDT5118/511L/511VW
-
-
100
nA
-
0.01
-
0.1
-
0.2
-
0.4
mA
-
0.5
-
1
-
1.5
-
2
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO 50
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 2 mA
-V(BR)CEO 50
-
-
V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
-VCEsat
-
-
0.3
V
Input Voltage (ON)
at -VO = 0.3 V, -IO = 20 mA MMDT511V/511L/5119/511H/5118W
-
at -VO = 0.3 V, -IO = 20 mA MMDT511FW
-
at -VO = 0.3 V, -IO = 2 mA
MMDT511TW
-
at -VO = 0.3 V, -IO = 2 mA
MMDT511DW
-
at -VO = 0.3 V, -IO = 2 mA
MMDT511EW
-
at -VO = 0.3 V, -IO = 10 mA
at -VO = 0.2 V, -IO = 5 mA
MMDT5111W
MMDT5112W
-VI(ON)
-
-
at -VO = 0.3 V, -IO = 2 mA
MMDT5113W
-
at -VO = 0.3 V, -IO = 5 mA
MMDT511MW
-
at -VO = 0.2 V, -IO = 5 mA
MMDT511ZW
-
at -VO = 0.3 V, -IO = 5 mA
MMDT511NW
-
at -VO = 0.3 V, -IO = 1 mA
MMDT5114W
-
-
3
-
2.5
-
2.5
-
5
-
4
-
3
V
-
3
-
3
-
1.1
-
1.7
-
1.3
-
1.4
1) hFE Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/06/2007
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