MMDT221F Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMDT221F
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 10 V, I_C = 5 mA
Collector Base Breakdown Voltage
at I_C = 10 µA
Collector Emitter Breakdown Voltage
at I_C = 2 mA
Collector Base Cutoff Current
at V_CB = 50 V
Collector Emitter Cutoff Current
at V_CE = 50 V
Emitter Base Cutoff Current
at V_EB = 6 V
Collector Emitter Saturation Voltage
at I_C = 10 mA, I_B = 0.3 mA
Output Voltage Low Level
at V_CC = 5 V, V_B = 2.5 V, R_L = 1 KΩ
Output Voltage High Level
at V_CC = 5 V, V_B = 0.5 V, R_L = 1 KΩ
Transition Frequency
at V_CB = 10 V, -I_E = 2 mA, f = 200 MHz
Input Resistor
Resistor Ratio
Symbol
h_FE
V_(BR)CBO
V_(BR)CEO
I_CBO
I_CEO
I_EBO
V_CEsat
V_OL
V_OH
f_T
R1
R1/R2
Min.
30
50
50
-
-
-
-
-
4.9
-
3.3
0.37
Typ.
Max.
Unit
-
-
-
-
-
V
-
-
V
-
100
nA
-
500
nA
-
1
mA
-
0.25
V
-
0.2
V
-
-
V
150
-
MHz
4.7
6.1
KΩ
-
0.57
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 31/03/2006