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| MMBTSD471 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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MMBTSD471
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=1V, IC=100mA
Current Gain Group O
hFE
90
-
180
-
Y
hFE
135
-
270
-
G
hFE
200
-
400
-
Collector Emitter Breakdown Voltage
at IC=10mA
V(BR)CEO
30
-
-
V
Collector Base Breakdown Voltage
at IC=100µA
V(BR)CBO
40
-
-
V
Emitter Base Breakdown Voltage
at IE=100µA
V(BR)EBO
5
-
-
V
Collector Cutoff Current
at VCB=30V
ICBO
-
-
0.1
µA
Collector Saturation Voltage
at IC=1.0A, IB=100mA
VCE(sat)
-
-
0.5
V
Base Saturation Voltage
at IC=1.0A, IB=100mA
VBE(sat)
-
-
1.2
V
Collector Output Capacitance
at VCB=6V, f=1MHz
COB
-
18
-
pF
Transition Frequency
at VCE=6V, IC=10mA
fT
-
130
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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