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| MMBTSC930 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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MMBTSC930
Characteristics at Tamb=25 OC
Symbol
Min.
DC Current Gain
at VCE=6V, IC=1mA
Current Gain Group C
hFE
40
D
hFE
60
E
hFE
100
F
hFE
160
Collector Cutoff Current
at VCB=10V
Emitter Cutoff Current
ICBO
-
at VEB=4V
Gain Bandwidth Product
IEBO
-
at VCE=6V, IC=1mA
Reverse Transfer Capacitance
fT
170
at VCB=6V, f=1MHz
Cre
1
Base to Collector Time Constant
at VCB=6V, IC=1mA, f=31.9MHz
Noise Figure
Rbbâ¤Cc
-
at VCB=6V, IC=1mA, f=100MHz
NF
-
Turn-on Time
at VIN=+12V, VBE=-3V,appointed circuit
ton
-
Turn-off Time
at VIN=-12V, VBE=+3V, appointed circuit
toff
-
Typ.
-
-
-
-
-
-
300
1.3
20
4
30
30
Max.
Unit
80
-
120
-
200
-
320
-
1
μA
1
μA
-
MHz
1.8
pF
36
ps
-
dB
-
ns
-
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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