MMBTSC5343 Datasheet, PDF (2/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC5343
Characteristics at T_amb=25 ^OC
DC Current Gain
at V_CE=6V, I_C=1mA
Current Gain Group ^O
Y
G
L
Collector Emitter Saturation Voltage
at I_C=50mA, I_B=5mA
Collector Cutoff Current
at V_CB=30V
Emitter Cutoff Current
at V_EB=4V
Transition Frequency
at V_CE=12V, I_C=2mA
Output Capacitance
at V_CB=12V, f=1MHz
Collector Base Breakdown Voltage
at I_C=50µA
Collector Emitter Breakdown Voltage
at I_C=1mA
Emitter Base Breakdown Voltage
at I_E=50µA
Noise Figure
at V_CE=6V, I_C=0.1mA,t f=1KHz, R_G=10KΩ
Symbol
h_FE
h_FE
h_FE
h_FE
V_CE(sat)
I_CBO
I_EBO
f_T
C_OB
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
NF
Min.
70
120
200
300
-
-
-
-
-
50
50
5
-
Typ.
-
-
-
-
-
-
-
180
2
-
-
1
Max.
Unit
140
-
240
-
400
-
700
-
400
mV
0.5
µA
0.5
µA
-
MHz
pF
V
-
V
-
V
10
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 20/10/2005