MMBTSC5065 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC5065
Characteristics at T_amb=25 ^OC
Symbol
Min.
DC Current Gain
at V_CE=5V, I_C=10mA
Current Gain Group O
h_FE
80
Y
h_FE
120
Collector Cutoff Current
at V_CB=10V
Emitter Cutoff Current
I_CBO
-
at V_EB=1.0V
Transition Frequency
I_EBO
-
at V_CE=5V, I_C=10mA
Reverse Transfer Capacitance
at V_CB=5V, f=1MHz ¹⁾
Output Capacitance
at V_CB=5V, f=1MHz ¹⁾
Insertion Gain
at V_CE=5V, I_C=10mA, f=500MHz
f_T
5
C_re
-
C_ob
-
S_21e
2
1
-
Insertion Gain
at V_CE=5V, I_C=10mA, f=1.0GHz
S_21e
2
2
8.5
Noise Figure
at V_CE=5V, I_C=3mA, f=500MHz
Noise Figure
NF₁
-
at V_CE=5V, I_C=3mA, f=1.0GHz
NF₂
-
1) _{Cre is measured by 3 terminal method with capacitance bridge.}
Typ.
-
-
-
-
7
0.45
0.7
17
12
1
1.1
Max.
160
240
1
1
-
0.9
-
-
-
-
2
Unit
-
-
µA
µA
GHz
pF
pF
dB
dB
dB
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005