MMBTSC3875 Datasheet, PDF (2/4 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

MMBTSC3875
Characteristics at T_amb=25 ^OC
DC Current Gain
at V_CE=6V, I_C=2mA
Current Gain Group ^O
Y
G
L
Collector Emitter Saturation Voltage
at I_C=100mA, I_B=10mA
Collector Cutoff Current
at V_CB=60V
Emitter Cutoff Current
at V_EB=5V
Transition Frequency
at V_CE=10V, I_C=1mA
Collector Output Capacitance
at V_CB=10V, f=1MHz
Symbol
h_FE
h_FE
h_FE
h_FE
V_CE(sat)
I_CBO
I_EBO
f_T
C_OB
Min.
70
120
200
300
-
-
-
80
-
Typ.
-
-
-
-
-
-
-
-
2
Max.
140
240
400
700
0.25
0.1
0.1
-
3.5
Unit
-
-
-
-
V
µA
µA
MHz
pF
Noise Figure
at V_CE=6V, I_C=0.1mA, f=1KHz, R_G=10KΩ
NF
-
1
10
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005