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| MMBTSC3265 Datasheet, PDF (2/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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MMBTSC3265
Characteristics at Tamb=25 OC
DC Current Gain
at VCE=1V, IC=100mA
Current Gain Group O
Y
at VCE=1V, IC=800mA
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=5V
Collector Emitter Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=1mA
Collector Emitter Saturation Voltage
at IC=500mA, IB=20mA
Transition Frequency
at VCE=5V, IC=10mA, f=100MHz
Base Emitter Voltage
at IC=10mA, VCE=1V
Collector Output Capacitance
at VCB=10V, f=1MHz
Symbol
hFE
hFE
hFE
ICBO
IEBO
V(BR)CEO
V(BR)EBO
VCE(sat)
fT
VBE
COB
Min.
100
160
40
-
-
30
5
-
-
0.5
-
Typ.
-
-
-
-
-
-
-
-
120
-
13
Max.
Unit
200
-
320
-
-
-
100
nA
100
nA
-
V
-
V
0.5
V
-
MHz
0.8
V
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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