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MMBTSC2714 Datasheet, PDF (2/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor
MMBTSC2714
Characteristics at Tamb=25 OC
Symbol Min.
DC Current Gain
at VCE=6V, IC=1mA
Current Gain Group R hFE
40
O
hFE
70
Y
hFE
100
Collector Cutoff Current
at VCB=18V
Emitter Cutoff Current
ICBO
-
at VEB=4V
Transition Frequency
IEBO
-
at VCE=6V, IC=1mA
Reverse Transfer Capacitance
fT
-
at VCB=6V, f=1MHz
Collector-Base Time Constant
Cre
-
Cc.rbb’
-
Noise Figure
at VCE=6V, IE=-1mA, f=100MHz
Power Gain
NF
-
at VCE=6V, IE=-1mA, f=100MHz
Gpe
17
Typ.
Max.
-
80
-
140
-
200
-
0.5
-
0.5
550
-
0.7
-
-
30
2.5
5
23
-
Unit
-
-
-
µA
µA
MHz
pF
ps
dB
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005