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| MMBTSC1621 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Switching Transistor | |||
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MMBTSC1621
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=1V, IC=10mA
at VCE=1V, IC=10mA, Ta= -55 OC
at VCE=2V, IC=100mA
Small Signal Current Gain
hFE
40
-
120
-
hFE
20
-
-
-
hFE
20
-
-
-
at VCE=10V, IC=1mA, f=100MHz
hfe
5
-
-
-
Collector Cutoff Current
at VCB=20V
at VCB=20V, Tj=125 OC
ICBO
-
-
-
0.4
µA
-
30
mA
Collector Saturation Voltage
at IC=10mA, IB=1mA
Base Saturation Voltage
VCE(sat)
-
-
0.25
V
at IC=10mA, IB=1mA
Collector Emitter Breakdown Voltage
VBE(sat)
0.7
-
0.85
V
at IC=10mA
Collector Emitter Breakdown Voltage
V(BR)CEO
15
-
-
V
at IC=10mA
Collector Base Breakdown Voltage
V(BR)CES
40
-
-
V
at IC=10mA
Emitter Base Breakdown Voltage
V(BR)CBO
40
-
-
V
at IE=10mA
Output Capacitance
V(BR)EBO
4.5
-
-
V
at VCB=5V, f=1MHz
Storage Time
Cob
-
-
4
pF
at ICon=IBon= -IBoff=10mA
Turn-on Time
ts
-
5
13
ns
at IC=10mA, IBon=3mA, VCC=3V
Turn-off Time
ton
-
8
12
ns
at IC=10mA, IBon=3mA, IBoff=1.5mA, VCC=3V
toff
-
10
18
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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