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| MMBTSA812 Datasheet, PDF (2/4 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistors | |||
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MMBTSA812
Characteristics at Tamb=25 OC
DC Current Gain
at -VCE=6V, -IC=1mA
Current Gain Group O
Y
G
L
Collector Cutoff Current
at -VCB=60V
Emitter Cutoff Current
at -VEB=5V
Collector Saturation Voltage
at -IC=100mA, -IB=10mA
Base Emitter Voltage
at -VCE=6V, -IC=1mA
Gain Bandwidth Product
at -VCE=6V, -IC=10mA
Output Capacitance
at -VCB=10V, f=1MHz
Symbol
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-VCE(sat)
-VBE
fT
COB
Min.
90
135
200
300
-
-
-
0.58
-
-
Typ.
-
-
-
-
-
-
-
-
180
4.5
Max.
180
270
400
600
0.1
0.1
0.3
0.68
-
-
Unit
-
-
-
-
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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