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MMBTSA733 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
MMBTSA733
Characteristics at Tamb=25 OC
Symbol
Min.
DC Current Gain
at -VCE=6V, -IC=1mA
Current Gain Group R
hFE
40
O
hFE
70
Y
hFE
120
P
hFE
200
L
hFE
350
Collector Base Breakdown Voltage
at -IC=100µA
Collector Emitter Breakdown Voltage
-V(BR)CBO
60
at -IC=10mA
Emitter Base Breakdown Voltage
-V(BR)CEO
50
at -IE=10µA
Collector Cutoff Current
-V(BR)EBO
5
at -VCB=60V
Emitter Cutoff Current
-ICBO
-
at -VEB=5V
Collector Saturation Voltage
-IEBO
-
at -IC=100mA, -IB=10mA
Base Emitter Voltage
-VCE(sat)
-
at -VCE=6V, -IC=1mA
Gain Bandwidth Product
-VBE(on)
0.5
at -VCE=6V, -IC=10mA
Output Capacitance
fT
50
at -VCB=10V, f=1MHz
Noise Figure
COB
-
at -VCE=6V, -IC=0.3mA, f=100Hz, RS=10KΩ
F
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
180
2.8
6
Max.
80
140
240
400
700
-
-
-
0.1
0.1
0.3
0.8
-
-
20
Unit
-
-
-
-
-
V
V
V
µA
µA
V
V
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005