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| MMBTSA1036 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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MMBTSA1036
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE=3V, -IC=100mA
Current Gain Group P
hFE
82
-
180
-
Q
hFE
120
-
270
-
R
hFE
180
-
390
-
Collector-base breakdown voltage
at -IC=100μA
-V(BR)CBO
40
-
-
V
Collector-emitter breakdown voltage
at -IC=1mA
-V(BR)CEO
32
-
-
V
Emitter-base breakdown voltage
at -IC=100μA
-V(BR)EBO
5
-
-
V
Collector Cutoff Current
at -VCB=20V
-ICBO
-
-
1
μA
Emitter Cutoff Current
at -VEB=4V
-IEBO
-
-
1
μA
Collector Saturation Voltage
at -IC=300mA, -IB=30mA
-VCE(sat)
-
-
0.6
V
Transition Frequency
at -VCE=5V, -IE=20mA, f=100MHz
Collector Output Capacitance
fT
-
200
-
MHz
at -VCB=10V, f=1MHz
Cob
-
7
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
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