MMBT4401 Datasheet, PDF (2/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT4401
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 1 V, I_C = 0.1 mA
at V_CE = 1 V, I_C = 1 mA
at V_CE = 1 V, I_C = 10 mA
at V_CE = 1 V, I_C = 150 mA
at V_CE = 2 V, I_C = 500 mA
Collector Emitter Saturation Voltage
at I_C = 150 mA, I_B = 15 mA
at I_C = 500 mA, I_B = 50 mA
Base Emitter Saturation Voltage
at I_C = 150 mA, I_B = 15 mA
at I_C = 500 mA, I_B = 50 mA
Collector Cutoff Current
at V_CB = 35 V
Base Cutoff Current
at V_EB = 5 V
Collector Base Breakdown Voltage
at I_C= 0.1mA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 0.1 mA
Current Gain Bandwidth Product
at V_CE = 10 V, I_C = 20 mA, f = 100 MHz
Collector Base Capacitance
at V_CB = 5 V, I_E = 0, f = 1 MHz
Emitter Base Capacitance
at V_EB = 0.5 V, I_C = 0, f = 1 MHz
Input Impedance
at I_C = 1 mA, V_CE = 10 V, f = 1 KHz
Voltage Feedback Ratio
at I_C = 1 mA, V_CE = 10 V, f = 1 KHz
Small Signal Current Gain
at I_C = 1 mA, V_CE = 10 V, f = 1 KHz
Output Admittance
at I_C = 1 mA, V_CE = 10 V, f = 1 KHz
Delay Time
Rise Time
V_CC = 30 V, V_EB = 2 V,
I_C = 150 mA, I_B1 = 15 mA
Storage Time
Fall Time
V_CC = 30 V, I_C = 150 mA,
I_B1 = I_B2 = 15 mA
Symbol
h_FE
h_FE
h_FE
h_FE
h_FE
V_CEsat
V_CEsat
V_BEsat
V_BEsat
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
f_T
C_cb
C_eb
h_ie
h_re
h_fe
h_oe
t_d
t_r
t_s
t_f
Min.
20
40
80
100
40
-
-
0.75
-
-
-
60
40
6
250
-
-
1
0.1
40
1
-
-
-
-
Max.
-
-
-
300
-
0.4
0.75
0.95
1.2
0.1
0.1
-
-
-
-
6.5
30
15
8
500
100
15
20
225
30
Unit
-
-
-
-
-
V
V
V
V
µA
µA
V
V
V
MHz
pF
pF
KΩ
X 10^-4
-
µmhos
ns
ns
ns
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005