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| MMBT2907 Datasheet, PDF (2/2 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR) | |||
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MMBT2907 / MMBT2907A
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at -IC = 0.1 mA, -VCE = 10 V
at -IC = 1 mA, -VCE = 10 V
at -IC = 10 mA, -VCE = 10 V
at -IC = 150 mA, -VCE = 10 V
at -IC = 500 mA, -VCE = 10 V
MMBT2907
hFE
35
MMBT2907A
hFE
75
MMBT2907
hFE
50
MMBT2907A
hFE
100
MMBT2907
hFE
75
MMBT2907A
hFE
100
hFE
100
MMBT2907
hFE
30
MMBT2907A
hFE
50
Collector Cutoff Current
at -VCB = 50 V
MMBT2907
-ICBO
-
MMBT2907A
-ICBO
-
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
60
Collector Emitter Breakdown Voltage
at -IC = 10 mA
MMBT2907
-V(BR)CEO
40
MMBT2907A -V(BR)CEO
60
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
Collector Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
-VCE(sat)
-
-VCE(sat)
-
Base Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
-VBE(sat)
-
-VBE(sat)
-
Gain Bandwidth Product
at -IC = 50 mA , -VCE = 20 V, f = 100 MHz
fT
200
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
Input Capacitance
at -VBE = 2 V, f = 1 MHz
Cib
-
Max.
-
-
-
-
-
-
300
-
-
20
10
-
-
-
-
0.4
1.6
1.3
2.6
-
8
30
Unit
-
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005
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