MMBT2369 Datasheet, PDF (2/3 Pages) Diotec Semiconductor – Surface Mount Si-Epi-Planar Switching Transistors

MMBT2369 / MMBT2369A
Characteristics at T_amb=25 ^OC
DC Current Gain
at V_CE=1V, I_C=10mA
at V_CE=1V, I_C=10mA
at V_CE=0.35V, I_C=10mA
at V_CE=0.35V, I_C=10mA,T_A=-55 ^OC
at V_CE=0.4V, I_C=30mA
at V_CE=2.0V, I_C=100mA
at V_CE=1.0V, I_C=100mA
Collector Emitter Saturation Voltage
at I_C=10mA, I_B=1mA
at I_C=10mA, I_B=1mA
at I_C=10mA, I_B=1mA,T_A=+125^oC
at I_C=30mA, I_B=3.0mA
at I_C=100mA, I_B=10mA
Base Emitter Saturation Voltage
at I_C=10mA, I_B=1mA
at I_C=10mA, I_B=1mA,T_A=-55^OC
at I_C=30mA, I_B=3mA
at I_C=100mA, I_B=10mA
Collector Cutoff Current
at V_CE=20V
Collector Cutoff Current
at V_CB=20V
at V_CB=20V, T_A = 150 ^OC
Collector Emitter Breakdown Voltage
at I_C=10mA
Collector Base Breakdown Voltage
at I_C=10µA
Collector Emitter Breakdown Voltage
at I_C=10µA
Emitter Base Breakdown Voltage
at I_E=10µA
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
Symbol Min. Max.
h_FE
40
120
h_FE
-
120
h_FE
40
-
h_FE
20
-
h_FE
30
-
h_FE
20
-
h_FE
20
-
V_CEsat
-
0.25
V_CEsat
-
0.2
V_CEsat
-
0.3
V_CEsat
-
0.25
V_CEsat
-
0.5
V_BEsat
0.7
0.85
V_BEsat
-
1.02
V_BEsat
-
1.15
V_BEsat
-
1.60
I_CES
-
0.4
I_CBO
-
0.4
I_CBO
-
30
V_(BR)CEO
15
-
V_(BR)CBO
40
-
V_(BR)CES
40
-
V_(BR)EBO
4.5
-
Unit
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
V
µA
µA
µA
V
V
V
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005