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| BC856W Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC856Wâ¦BC860W
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Collector Base Voltage
at -IC = 10 µA
BC856AW~BC860AW
hFE
125
BC856BW~BC860BW
hFE
220
BC856CW~BC860CW
hFE
420
BC856W
80
BC857W
-VCBO
50
BC858W
30
BC859W
30
BC860W
50
Collector Emitter Voltage
at -IC = 10 mA
BC856W
65
BC857W
-VCEO
45
BC858W
30
BC859W
30
BC860W
45
Emitter Base Voltage
at -IE = 1 µA
Collector Base Cutoff Current
at -VCB = 30 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
-IC = 100 mA, -IB = 5 mA
Base Emitter Voltage
at -VCE = 5 V, -IC = 2 mA
-VCE = 5 V, -IC = 10 mA
Transition Frequency
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
Output Capacitance
at -VCB = 10 V, IE = 0, f = 1 MHz
-VEBO
5
-ICBO
-
-IEBO
-
-VCE(sat)
-
-
-VBE
0.6
-
fT
100
Cob
-
Max.
250
475
800
-
-
-
-
-
-
-
-
-
-
-
15
100
0.3
0.65
0.75
0.82
-
4.5
Unit
-
-
-
V
V
V
nA
nA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/06/2006
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