BC856 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose transistors

BC856…BC858
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 5 V, -I_C = 2 mA
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
Collector Emitter Saturation Voltage
at -I_C = 10 mA, -I_B = 0.5 mA
at -I_C = 100 mA, -I_B = 5 mA
Base Emitter On Voltage
at -I_C = 2 mA, -V_CE = 5 V
at -I_C = 10 mA, -V_CE = 5 V
Collector Cutoff Current
at -V_CB = 30 V
at -V_CB = 30 V, T_A = 150 ^OC
Collector Emitter Breakdown Voltage
at -I_C = 10 µA
BC856 Series
BC857 Series
BC858 Series
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
BC856 Series
BC857 Series
BC858 Series
Collector Base Breakdown Voltage
at -I_C = 10 µA
BC856 Series
BC857 Series
BC858 Series
Emitter Base Breakdown Voltage
at -I_E = 1 µA
BC856 Series
BC857 Series
BC858 Series
Current Gain Bandwidth Product
at -V_CE = 5 V, -I_C = 10 mA, f = 100 MHz
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Noise Figure
at -I_C = 0.2 mA, -V_CE = 5 V, R_S = 2 KΩ,tf = 1 KHz, BW = 200 Hz
Symbol
h_FE
h_FE
h_FE
-V_CE(sat)
-V_CE(sat)
-V_BE(on)
-V_BE(on)
-I_CBO
-I_CBO
-V_(BR)CES
-V_(BR)CES
-V_(BR)CES
-V_(BR)CEO
-V_(BR)CEO
-V_(BR)CEO
-V_(BR)CBO
-V_(BR)CBO
-V_(BR)CBO
-V_(BR)EBO
-V_(BR)EBO
-V_(BR)EBO
f_T
C_ob
NF
Min.
125
220
420
-
-
0.6
-
-
-
80
50
30
65
45
30
80
50
30
5
5
5
100
-
-
Max. Unit
250
-
475
-
800
-
0.3
V
0.65
V
0.75
V
0.82
V
15
nA
4
µA
-
V
-
V
-
V
-
V
-
V
-
V
-
V
-
V
-
V
-
V
-
V
-
V
-
MHz
4.5
pF
10
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/06/2006