BAS81 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier diodes

BAS81
Characteristics at T_amb = 25^oC
Forward Voltage
at I_F = 0.1mA
at I_F = 1mA
at I_F = 15mA
Leakage Current
at V_R = V_RMAX
Junction Capacitance
at V_R = 2V, f = 1MHz
Symbol
Min.
Typ.
Max.
Unit
V_F
-
V_F
-
V_F
-
-
0.33
V
-
0.41
V
-
1
V
I_R
-
-
200
nA
C_tot
-
-
1.6
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/12/2004