 English |
|
|
|
|
|
|
|
| 2N5400 Datasheet, PDF (2/3 Pages) Motorola, Inc – Amplifier Transistor(PNP Silicon) | |||
| |||
| ◁ |
2N5400 / 2N5401
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 50 mA
Collector Base Cutoff Current
at -VCB = 100 V
at -VCB = 120 V
Emitter Base Cutoff Current
at -VEB = 3 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 10 V, -IC = 10 mA, f = 100 MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
2N5400
hFE
2N5401
hFE
2N5400
hFE
2N5401
hFE
2N5400
hFE
2N5401
hFE
2N5400
2N5401
-ICBO
-IEBO
2N5400 -V(BR)CBO
2N5401
2N5400 -V(BR)CEO
2N5401
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
Cob
Min.
30
50
40
60
40
50
-
-
-
130
160
120
150
5
-
-
-
-
100
-
Max.
-
-
180
240
-
-
100
50
50
-
-
-
-
-
0.2
0.5
1
1
400
6
Unit
-
-
-
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated: 12/08/2016 Revï¼01
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese