ZHCS400 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

ZHCS400
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
Features
• Low V_F
• High current capability
• Miniature surface mount package
Applications
• DC-DC converters
• Mobile telecom
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Forward Current (Continuous)
Average Peak Forward Current
Non-Repetitive Forward Current t ≤ 100 μs
t ≤ 10 ms
Power Dissipation
Junction Temperature
Storage Temperature Range
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
SB
Top View
Marking Code: "SB"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_R
40
V
I_F
400
mA
I_FAV
1000
mA
I_FSM
6.75
3
A
A
P_tot
250
mW
T_j
125
O_C
T_s
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Reverse Breakdown Voltage
at I_R = 200 μA
Forward Voltage
at I_F = 50 mA
at I_F = 100 mA
at I_F = 250 mA
at I_F = 400 mA
at I_F = 750 mA
at I_F = 1000 mA
at I_F = 1500 mA
Reverse Current
at V_R = 30 V
Diode Capacitance
at V_R = 25 V, f = 1 MHz
Reverse Recovery Time
Switched from I_F = 500 mA to I_R = 500 mA,
Measured at I_R = 50 mA
Symbol Min. Typ. Max. Unit
V_(BR)R
40
-
-
V
-
-
V_F
-
-
-
-
-
I_R
-
-
300
-
350
-
-
460
500
mV
-
670
-
780
-
1050
-
40
µA
C_D
-
20
-
pF
t_rr
-
10
-
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006