STLL60P Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – SILICON SCHOTTKY BARRIER DIODE

ST LL60P
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to or better than 1N60P
ideal for used in detection or for switching on the
radio, TV, etc.
Absolute Maximum Ratings (T_a = 25^oC)
Reverse Voltage dc
Peak Reverse Voltage
Average Rectified Output Current
Peak Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_R
20
V
V_RM
45
V
I_O
50
mA
I_FM
150
mA
I_surge
500
mA
T_j
75
O_C
T_S
-55 to +175
O_C
Characteristics at T_a = 25^oC
Forward Current
at V_F = 1V
Reverse Currents
at V_R = 10V
Junction Capacitance C
at f = 1MHz, V = 1V
Rectification Efficiency
at Vi = 2Vrms, = 5KΩ
Symbol
Min.
Typ.
Max.
Unit
I_F
4
-
-
mA
I_R
-
-
50
μA
-
-
-
1
pF
η
55
-
-
%
Output
Input 2Vrms
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/02/2003