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| ST8550 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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ST 8550 (2A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into two groups C and
D according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 5 mA
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 1.5 A
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 6 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 1.5 A, -IB = 100 mA
Base Emitter Saturation Voltage
at -IC = 1.5 A, -IB = 100 mA
Base Emitter On Voltage
at -IC = 10 mA, -VCE = 1 V
Gain Bandwidth Product
at -VCE = 10 V, -IC = 50 mA
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
Value
Unit
-VCBO
40
V
-VCEO
25
V
-VEBO
6
V
-IC
2
A
-IB
100
mA
Ptot
1
W
Tj
150
OC
TS
- 55 to + 150
OC
Symbol Min.
hFE
45
8550C hFE
120
8550D hFE
160
hFE
40
-ICBO
-
-IEBO
-
-V(BR)CBO
40
-V(BR)CEO
25
-V(BR)EBO
6
-VCE(sat)
-
-VBE(sat)
-
-VBE(on)
-
fT
120
COB
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
15
Max.
-
200
300
-
100
100
-
-
-
0.5
1.2
1
-
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/08/2008
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