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| ST8050U Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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ST 8050U
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Especially suitable for AF-driver stages
and low power output stages.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
40
25
6
1.5
625
150
- 55 to + 150
V
V
V
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min.
DC Current Gain
at VCE = 1 V, IC = 5 mA
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 800 mA
Collector Base Cutoff Current
at VCB = 35 V
Emitter Base Cutoff Current
at VEB = 6 V
hFE
45
Current Gain Group C hFE
120
D
hFE
160
hFE
40
ICBO
-
IEBO
-
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
40
Collector Emitter Breakdown Voltage
at IC = 2 mA
V(BR)CEO
25
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
6
Collector Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
VCE(sat)
-
Base Emitter Saturation Voltage
at IC = 800 mA, IB = 80 mA
VBE(sat)
-
Base Emitter Voltage
at IC = 10 mA, VCE = 1 V
VBE
-
Gain Bandwidth Product
at VCE = 10 V, IC = 50 mA
fT
100
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
COB
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
9
Max.
-
200
300
-
100
100
-
-
-
0.5
1.2
1
-
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/09/2008
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