ST60P Datasheet, PDF (1/1 Pages) Semtech Corporation – SILICON SCHOTTKY BARRIER DIODE

ST60P, ST60S
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to
1N60P and 1N60S
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Peak Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
3.9 max
R5 max
10.0± 1.0
1.0 max
Glass case DO-35-1
Dimensions in mm
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Symbol
Value
Unit
V_RM
45
V
V_R
20
V
I_O
50
mA
I_FM
150
mA
I_surge
500
mA
T_j
175
O_C
T_S
- 55 to + 175
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Current
at V_F = 1 V
Reverse Current
at V_R = 10 V
Symbol
Min.
Max.
Unit
I_F
4
-
mA
ST60P
I_R
ST60S
-
50
µA
-
100
Junction Capacitance
at f = 1 MHz, V = -1 V
C
-
1
pF
Rectification efficiency
at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz
η
55
-
%
~~~
output
Input 2Vrms
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007