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| ST2SD882U-P Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN SILICON EPITAXIAL POWER TRANSISTOR | |||
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ST 2SD882U-P
NPN SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in medium
power linear and switching applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation at TA = 25 OC
Power Dissipation at TC = 25 OC
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 500 mA
at VCE = 1 V, IC = 2 A
at VCE = 2 V, IC = 1 A
at VCE = 5 V, IC = 10 mA
Collector Base Cutoff Current
at VCB = 120 V
Collector Emitter Cutoff Current
at VCE = 100 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Emitter Breakdown Voltage
at IC = 1 mA
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 200 mA
Base Emitter On Voltage
at VCE = 1 V, IC = 2 A
Transition Frequency
at VCE = 1 V, IC = 250 mA
TO-126 Plastic Package
Symbol
Value
Unit
VCBO
120
V
VCES
100
V
VCEO
100
V
VEBO
6
V
IC
4
A
ICM
7
A
IB
1
A
PD
1.25
mW
PD
36
mW
TS
- 65 to + 150
OC
Symbol
hFE
hFE
hFE
hFE
ICBO
ICES
IEBO
V(BR)CEO
VCE(sat)
VBE(on)
fT
Min.
100
15
100
15
-
-
-
100
-
-
3
Max.
260
-
260
-
100
100
1
-
0.8
1.5
-
Unit
-
-
-
-
µA
µA
mA
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/06/2008 CD
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