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ST2SD882T Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Power Transistor
ST 2SD882T
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R, Q,
P and E, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (pulse)
Total power dissipation (Ta = 25 OC)
Total power dissipation (Tc = 25 OC)
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IC(pulse)
Ptot
Ptot
Tj
TS
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group R hFE
60
Q
hFE
100
P
hFE
160
E
hFE
200
at VCE = 2 V, IC = 20 mA
hFE
30
Collector Cutoff Current
at VCB = 30 V
ICBO
-
Emitter Cutoff Current
at VEB = 3 V
IEBO
-
Output Capacitance
VCB = 10 V, f = 1 MHz
Cob
-
Base Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
VBE(sat)
-
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
VCE(sat)
-
Gain Bandwidth Product
at VCE = 5 V, IC = 0.1 A
fT
-
E
C
B
TO-126 Plastic Package
Value
Unit
40
V
30
V
5
V
3
A
7
A
1
W
10
W
150
OC
-55 to +150
OC
Typ.
Max.
Unit
-
120
-
-
200
-
-
320
-
-
400
-
-
-
-
-
1
µA
-
1
µA
45
-
pF
-
2
V
-
0.5
V
90
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006
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