ST2SD882H Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Power Transistor

ST 2SD882H
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R,
Q, P and E, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (pulse)
Total Power Dissipation(T_a = 25 ^OC)
Total Power Dissipation(T_C = 25 ^OC)
Junction Temperature
Storage Temperature Range
E
C
B
TO-126 Plastic Package
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_tot
P_tot
T_j
T_S
Value
60
30
5
3
7
1
10
150
- 55 to + 150
Unit
V
V
V
A
A
W
W
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 2 V, I_C = 1 A
Current Gain Group
at V_CE = 2 V, I_C = 20 mA
Collector Cutoff Current
at V_CB = 60 V
Emitter Cutoff Current
at V_EB = 3 V
Collector Emitter Saturation Voltage
at I_C = 2 A, I_B = 0.2 A
Base Emitter Saturation Voltage
at I_C = 2 A, I_B = 0.2 A
Gain Bandwidth Product
at V_CE = 5 V, I_C = 0.1 A
Output Capacitance
at V_CB = 10 V, f = 1 MHz
Symbol Min.
R
Q
P
E
h_FE
h_FE
h_FE
h_FE
h_FE
60
100
160
200
30
I_CBO
-
I_EBO
-
V_CEsat
-
V_BEsat
-
f_T
-
C_ob
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max. Unit
120
-
200
-
320
-
400
-
-
-
1
µA
1
µA
0.5
V
2
V
-
MHz
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/09/2006