ST2SD1691T Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Power Transistor

ST 2SD1691T
NPN Silicon Epitaxial Power Transistor
For Low-Frequencey Power Amplifiers and
Mid-Speed Switching
The transistor is subdivided into three groups, M, L and
K, according to its DC-DC current gain.
E
C
B
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
TO-126 Plastic Package
Value
Unit
Collector to Base Voltage
V_CBO
60
V
Collector to Emitter Voltage
V_CEO
60
V
Emitter to Base Voltage
V_EBO
7
V
Collector Current
I_C(DC)
5
A
Base Current
I_B(DC)
1
A
Collector Current (pulse) ¹⁾
I_C(pulse)
8
A
Total power dissipation (T_a = 25 ^OC)
Total power dissipation (T_c = 25 ^OC)
Junction Temperature
P_tot
1.3
W
P_tot
20
W
T_j
150
O_C
Storage Temperature Range
1) _{PW≦10ms, duty cycle≦50%.}
Characteristics at T_a = 25 ^OC
T_S
-55 to +150
O_C
Parameter
Symbol Min.
Max.
Unit
DC Current Gain
at V_CE = 1 V, I_C = 2 A
at V_CE = 1 V, I_C = 0.1 A
at V_CE = 1 V, I_C = 5 A
Collector Cutoff Current
at V_CB = 50 V
Emitter Cutoff Current
at V_EB = 7 V
Base Saturation Voltage
at I_C = 2 A, I_B = 0.2 A
Collector Saturation Voltage
at I_C = 2 A, I_B = 0.2 A
Current Gain Group M h_FE
100
200
-
L
h_FE
160
320
-
K
h_FE
200
400
-
h_FE
60
-
-
h_FE
50
-
-
I_CBO
-
10
µA
I_EBO
-
10
µA
V_BE(sat)
-
1.2
V
V_CE(sat)
-
0.3
V
Turn-on time
T_on
-
1
µs
Storage time ^{at IC = 2 A, IB1 = -IB2 = 0.2 A,RL = 5 Ω, VCC = 10 V}
T_stg
-
2.5
µs
Fall time
t_f
-
1
µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006