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| ST2SC2884U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor | |||
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ST 2SC2884U
NPN Silicon Epitaxial Planar Transistor
for audio frequency amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
PC
TJ
TS
35
30
5
800
500
150
- 55 to + 150
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
at VCE = 1 V, IC = 700 mA
Current Gain Group O hFE
100
-
200
-
Y
hFE
160
-
320
-
hFE
35
-
-
-
Collector Base Cutoff Current
at VCB = 35 V
ICBO
-
-
0.1
µA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
-
0.1
µA
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
35
-
-
V
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 20 mA
Base Emitter On Voltage
at VCE = 1 V, IC = 10 mA
Transition Frequency
at VCE = 5 V, IC = 10 mA
Output Capacitance
at VCB = 10 V, f = 1 MHz
V(BR)CEO
30
-
-
V
V(BR)EBO
5
-
-
V
VCE(sat)
-
-
0.5
V
VBE(on)
0.5
-
0.8
V
fT
-
120
-
MHz
Cob
-
13
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 03/01/2008
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