ST2SC1815 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

ST 2SC1815
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups,
O, Y, G and L, according to its DC current
gain. As complementary type the PNP
transistor ST 2SA1015 is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_S
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
60
V
50
V
5
V
150
mA
50
mA
400
mW
125
O_C
-55 to +150
O_C
Characteristics at T_amb = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE=6V, I_C=2mA
Current Gain Group O
h_FE
70
Y
h_FE
120
G
h_FE
200
L
h_FE
350
at V_CE=6V, I_C=150mA
h_FE
25
Collector Saturation Voltage
at I_C=100mA, I_B=10mA
V_CE(sat)
-
Base Saturation Voltage
at I_C=100mA, I_B=10mA
Collector Cutoff Current
V_BE(sat)
-
at V_CB=60V
at V_EB=5V
I_CBO
-
I_EBO
-
Gain Bandwidth Product
at V_CE=10V, I_C=1mA
f_T
80
Output Capacitance
at V_CB=10V, f=1MHz
Noise Figure
at V_CE=6V, I_C=0.1mA, f=1KHz, R_G=10KΩ
C_OB
-
NF
-
Typ.
-
-
-
-
-
-
-
-
-
-
2
1
Max.
140
240
400
700
-
0.25
1
0.1
0.1
-
3
1
Unit
-
-
-
-
-
V
V
µA
µA
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/12/2005