ST2SC1359 Datasheet, PDF (1/4 Pages) SEMTECH ELECTRONICS LTD. – NPN Epitaxial Silicon Transistor

ST 2SC1359
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group,
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at V_CE=6V, I_C=1mA
Collector Base Breakdown Voltage
at I_C=100µA
Collector Emitter Breakdown Voltage
at I_C=10mA
Emitter Base Breakdown Voltage
at I_E=10µA
Collector Cutoff Current
at V_CB=30V
Emitter Cutoff Current
at V_EB=3V
Collector Saturation Voltage
at I_C=100mA, I_B=10mA
Gain Bandwidth Product
at V_CE=6V, I_C=10mA
Output Capacitance
at V_CB=6V, f=1MHz
Noise Figure
at V_CE=6V, I_E=0.5mA, f=1KHz, R_S=500Ωat
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
30
V
20
V
5
V
100
mA
250
mW
150
O_C
-55 to +150
O_C
Symbol
h_FE
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
f_T
C_OB
NF
Min.
150
30
20
5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
125
1.8
4
Max.
650
-
-
-
0.1
0.1
0.3
-
-
-
Unit
-
V
V
V
µA
µA
V
MHz
pF
dB
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/12/2005