ST2SC1008 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

ST 2SC1008
NPN Silicon Epitaxial Planar Transistor
for medium speed switching and low frequency
amplifier applications.
The transistor is subdivided into three groups, R,
O, Y,and G according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Value
Unit
80
V
60
V
8
V
700
mA
800
mW
150
O_C
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at V_CE = 2 V, I_C = 50 mA
Current Gain Group R h_FE
40
-
80
-
O h_FE
70
-
140
-
Y
h_FE
120
-
240
-
G h_FE
200
-
400
-
Collector Base Cutoff Current
at V_CB = 60 V
I_CBO
-
-
0.1
µA
Emitter Base Cutoff Current
at V_EB = 5 V
I_EBO
-
-
0.1
µA
Collector Base Breakdown Voltage
at I_C = 100 µA
V_(BR)CBO
80
-
-
V
Collector Emitter Breakdown Voltage
at I_C = 10 mA
V_(BR)CEO
60
-
-
V
Emitter Base Breakdown Voltage
at I_E = 10 µA
V_(BR)EBO
8
-
-
V
Collector Emitter Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
V_CEsat
-
-
0.4
V
Base Emitter Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
V_BEsat
-
-
1.1
V
Gain Bandwidth Product
at V_CE = 10 V, I_C = 50 mA
f_T
30
-
-
MHz
Output Capacitance
at V_CB = 10 V, I_E = 0, f = 1 MHz
C_ob
-
8
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/03/2009