ST2SB772S Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Transistor

ST 2SB772S
PNP Silicon Epitaxial Transistor
Medium Power Low Voltage Transistor
The transistor is subdivided into three groups
Q, P and E, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_CM
-I_B
P_tot
T_j
T_S
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
40
V
30
V
5
V
3
A
7
A
600
mA
500
mW
150
O_C
- 55 to + 150
O_C
Characteristics (T_a = 25 ^OC)
Parameter
Symbol Min.
DC Current Gain
at -V_CE = 2 V, -I_C = 1 A
at -V_CE = 2 V, -I_C = 20 mA
Current Gain Group Q h_FE
100
P
h_FE
160
E
h_FE
200
h_FE
30
Collector Cutoff Current
at -V_CB = 30 V
-I_CBO
-
Emitter Cutoff Current
at -V_EB = 3 V
-I_EBO
-
Collector-Emitter Saturation Voltage
at -I_C= 2 A, -I_B = 200 mA
-V_CE(sat)
-
Base-Emitter Saturation Voltage
at -I_C= 2 A, -I_B = 200 mA
-V_BE(sat)
-
Current Gain Bandwidth Product
at -V_CE = 5 V, -I_C = 0.1 A
f_T
-
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
C_ob
-
Typ.
-
-
-
-
-
-
-
-
80
45
Max.
200
320
400
-
1
1
0.5
2
-
-
Unit
-
-
-
-
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/10/2006