ST2SB1424U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

ST 2SB1424U
PNP Silicon Epitaxial Planar Transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - DC
Collector Current - Pulse ¹⁾
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1) _{Single pulse, PW = 10 ms.}
Symbol
Value
Unit
-V_CBO
20
V
-V_CEO
20
V
-V_EBO
6
V
-I_C
3
A
-I_CP
5
A
P_tot
0.5
W
T_J
150
O_C
T_S
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -V_CE = 2 V, -I_C = 100 mA
Current Gain Group ^{Q h}FE
120
-
270
-
R
h_FE
180
-
390
-
Collector Base Breakdown Voltage
at -I_C = 50 µA
-V_(BR)CBO
20
-
-
V
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 50 µA
Collector Cutoff Current
at -V_CB = 20 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Emitter Saturation Voltage
at -I_C = 2 A, -I_B = 100 mA
Transition Frequency
at -V_CE = 2 V, -I_E = 0.5 A, f = 100 MHz
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
-V_(BR)CEO
20
-
-
V
-V_(BR)EBO
6
-
-
V
-I_CBO
-
-
0.1
µA
-I_EBO
-
-
0.1
µA
-V_CE(sat)
-
-
0.5
V
f_T
-
240
-
MHz
C_ob
-
35
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/12/2006