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ST2SB1116 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor
ST 2SB1116 / 2SB1116A
PNP Silicon Epitaxial Planar Transistor
Audio frequency power amplifier and medium
speed switching.
The transistor is subdivided into three groups,
Y, G and L, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
2SB1116
2SB1116A
2SB1116
2SB1116A
Collector Current
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 0.1 A
at -VCE = 2 V, -IC = 1 A
Collector Cutoff Current
at -VCB = 60 V
Emitter Cutoff Current
at -VEB = 6 V
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
Base Emitter On Voltage
at -VCE = 2 V, -IC = 50 mA
Gain Bandwidth Product
at -VCE = 2 V, -IC = 100 mA
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
Value
Unit
-VCBO
60
80
V
-VCEO
50
60
V
-VEBO
6
V
-IC
1
A
-ICP
2
A
Ptot
0.75
W
Tj
150
OC
TS
- 55 to + 150
OC
Symbol
Y
hFE
G
hFE
L
hFE
hFE
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
-VBE(on)
fT
Min.
135
200
300
81
-
-
-
-
0.6
70
Max.
270
400
600
-
100
100
0.4
1.2
0.7
-
Unit
-
-
-
-
nA
nA
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/11/2006