ST2SA1664U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Epitaxial Planar Transistor

ST 2SA1664U
PNP Epitaxial Planar Transistor
High Current Application
The transistor is subdivided into two groups, O
and Y, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 1 V, -I_C = 100 mA
O
Y
at -V_CE = 1 V, -I_C = 700 mA
Collector Cutoff Current
at -V_CB = 35 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
Base Emitter Voltage
at -V_CE = 1 V, -I_C = 10 mA
Collector Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Collector Emitter Saturation Voltage
at -I_C = 500 mA, -I_B = 20 mA
Transition Frequency
at -V_CE = 5 V, -I_C = 10 mA
Symbol
h_FE
h_FE
h_FE
-I_CBO
-I_EBO
-V_(BR)CEO
-V_BE
C_ob
-V_CE(sat)
f_T
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_B
P_tot
T_j
T_S
Min.
100
160
35
-
-
30
0.5
-
-
-
Value
Unit
35
V
30
V
5
V
800
mA
160
mA
500
mW
150
O_C
-55 to +150
O_C
Typ.
Max.
Unit
-
200
-
-
320
-
-
-
-
-
100
nA
-
100
nA
-
-
V
-
0.8
V
19
-
pF
-
0.7
V
120
-
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006