ST2SA1585 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

ST 2SA1585
PNP Silicon Epitaxial Planar Transistor
The transistor is subdivided into two groups, Q
and R, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1) _{Single pulse Pw = 10 ms}
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 2 V, -I_C = 100 mA Current Gain Group
Collector Base Breakdown Voltage
at -I_C = 50 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 50 µA
Collector Cutoff Current
at -V_CB = 20 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Emitter Saturation Voltage
at -I_C = 2 A, -I_B = 0.1 A
Transition Frequency
at -V_CE = 2 V, I_E = 500 mA, f = 100 MHz
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_CP1)
P_tot
T_j
T_S
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
20
V
20
V
6
V
2
A
5
400
mW
150
O_C
- 55 to + 150
O_C
Symbol Min.
Q
h_FE
R
h_FE
-V_(BR)CBO
120
180
20
-V_(BR)CEO 20
-V_(BR)EBO
6
-I_CBO
-
-I_EBO
-
-V_CE(sat)
-
f_T
-
C_OB
-
Typ.
-
-
-
-
-
-
-
-
240
35
Max.
270
390
-
-
-
100
100
0.5
-
-
Unit
-
-
V
V
V
nA
nA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/07/2006