ST1702 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

ST 1702
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
The transistor is subdivided into five groups, L, M,
N, O and P, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Power Dissipation
P_tot
Junction Temperature
T_j
Storage Temperature Range
T_S
Characteristics at T_amb = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE = 1 V, I_C = 100 mA Current Gain Group ^L
h_FE
132
M
h_FE
170
N
h_FE
213
O
h_FE
263
P
h_FE
333
Collector Base Breakdown Voltage
at I_C = 10 µA
V_(BR)CBO
30
Collector Emitter Breakdown Voltage
at I_C = 10 mA
V_(BR)CEO
25
Emitter Base Breakdown Voltage
at I_E = 100 µA
V_(BR)EBO
5
Collector Cutoff Current
at V_CB = 20 V
I_CBO
-
Emitter Cutoff Current
at V_EB = 5 V
I_EBO
-
Collector Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
V_CE(sat)
-
Gain Bandwidth Product
at V_CE = 5 V, I_C = 10 mA
f_T
-
Output Capacitance
at V_CB = 5 V, f = 1 MHz
C_OB
-
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
30
V
25
V
5
V
1
A
600
mW
150
O_C
- 55 to + 150
O_C
Typ.
Max.
Unit
-
189
-
-
233
-
-
300
-
-
370
-
-
476
-
-
-
V
-
-
V
-
-
V
-
0.1
µA
-
0.5
µA
-
0.7
V
100
-
MHz
12
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/06/2006