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ST13005 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
ST 13005
NPN Silicon Power Transistors
for high-voltage, high-speed power switching
applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation (Ta = 25 OC)
Power Dissipation (Tc = 25 OC)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 A
at VCE = 5 V, IC = 2 A
Collector Base Cutoff Current
at VCB = 700 V
Emitter Base Cutoff Current
at VEB = 9 V
Collector Emitter Breakdown Voltage
at IC = 10 mA
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A
at IC = 2 A, IB = 0.5 A
at IC = 4 A, IB = 1 A
Base Emitter Saturation Voltage
at IC = 1 A, IB = 0.2 A
at IC = 2 A, IB = 0.5 A
Gain Bandwidth Product
at VCE = 10 V, IC = 500 mA, f = 1 MHz
Collector Base Capacitance
at VCB = 10 V, f = 0.1 MHz
TO-220 Plastic Package
Symbol
Value
Unit
VCBO
700
V
VCEO
400
V
VEBO
9
V
IC
4
A
Ptot
2
W
Ptot
75
W
Tj
150
OC
TS
- 55 to + 150
OC
Symbol Min.
hFE
10
hFE
8
ICBO
-
IEBO
-
V(BR)CEO 400
VCE(sat)
-
VCE(sat)
-
VCE(sat)
-
VBE(sat)
-
VBE(sat)
-
fT
4
Ccb
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
65
Max. Unit
60
-
40
-
1
mA
1
mA
-
V
0.5
V
0.6
V
1
V
1.2
V
1.6
V
-
MHz
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/08/2008
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