ST13003 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST 13003
NPN Silicon Epitaxial Planar Transistor
for power switching and electron rectifier
applications.
The transistor is subdivided into one group
according to its DC current gain.
TO-220 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at V_CE = 10 V, I_C = 100 mA
Collector Base Breakdown Voltage
at I_C = 1 mA
Collector Emitter Breakdown Voltage
at I_C = 10 mA
Emitter Base Breakdown Voltage
at I_E = 1 mA
Collector Cutoff Current
at V_CB = 600 V
Emitter Cutoff Current
at V_EB = 9 V
Collector Emitter Saturation Voltage
at I_C = 1 A, I_B = 250 mA
Base Emitter Saturation Voltage
at I_C = 1 A, I_B = 250 mA
Symbol
Value
Unit
V_CBO
600
V
V_CEO
400
V
V_EBO
9
V
I_C
1.5
A
P_tot
1.5
W
T_j
150
O_C
T_s
-55 to +150
O_C
Symbol
h_FE
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
V_BE(sat)
Min.
10
600
400
9
-
-
-
-
Max.
Unit
70
-
-
V
-
V
-
V
100
nA
100
µA
1
V
1.2
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006