ST13002T Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Power Transistors

ST 13002T / ST 13003T
NPN Silicon Power Transistors
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical.
They are particularly suited for 115 and 220V
SWITCHMODE applications such as Switching
Regulator’s, Inverters, Motor Controls, Solenoid /
Relay drivers and Deflection circuits.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Collector Current - Peak ¹⁾
Base Current - Continuous
Base Current - Peak ¹⁾
Emitter Current - Continuous
Emitter Current - Peak ¹⁾
Total Power Dissipation @ T_A = 25 ^OC
Derate above 25 ^OC
Total Power Dissipation @ T_C = 25 ^OC
Derate above 25 ^OC
Operating and Storage Junction Temperature Range
Thermal Resistance ,Junction to Ambient
Thermal Resistance ,Junction to Case
1) _{Pulse Test: Pulse Width=5ms, Duty Cycle≤10%.}
E
C
B
TO-126 Plastic Package
Symbol
V_CEO(sus)
V_CEV
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
P_D
T_J, T_s
R_θJA
R_θJC
Value
ST13002T ST13003T
300
400
600
700
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
-65 to +150
89
3.12
Unit
V
V
V
A
A
A
W
mW/^OC
W
mW/^OC
O_C
O_C/W
O_C/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 28/04/2006