ST13001 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

ST 13001
NPN Silicon Epitaxial Planar Transistor
for high voltage and high speed switching applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 10 V, I_C = 0.25 mA
at V_CE = 20 V, I_C = 20 mA
Collector Base Cutoff Current
at V_CB = 500 V
Collector Emitter Cutoff Current
at V_CE = 400 V
Emitter Base Cutoff Current
at V_EB = 9 V
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 100 µA
Collector Emitter Saturation Voltage
at I_C = 50 mA, I_B = 10 mA
Base Emitter Saturation Voltage
at I_C = 50 mA, I_B = 10 mA
Transition Frequency
at V_CE = 20 V, I_C = 20 mA, f = 1 MHz
Fall Time
at I_C = 50 mA, I_B = -I_B2 = 5 mA, V_CC = 45 V
Storage Time
at I_C = 50 mA, I_B = -I_B2 = 5 mA, V_CC = 45 V
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
500
V
400
V
9
V
0.3
A
0.75
W
150
O_C
- 55 to + 150
O_C
Symbol
h_FE
h_FE
I_CBO
I_CEO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_CE(sat)
V_BE(sat)
f_T
t_f
t_s
Min.
5
10
-
-
-
500
400
9
-
-
8
-
-
Max.
-
40
100
200
100
-
-
-
0.5
1.2
-
0.3
1.5
Unit
-
-
µA
µA
µA
V
V
V
V
V
MHz
µs
µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 29/08/2008