ST-2SD2150U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

ST 2SD2150U
NPN Silicon Epitaxial Planar Transistor
Low frequency transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - DC
Collector Current - Pulse ¹⁾
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1) _{Single pulse Pw = 10 ms.}
2) _{Mounted on a 40 X 40 X 0.7 mm ceramic substrate.}
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_tot
T_J
T_S
Value
40
20
6
3
5 ¹⁾
0.5
2 ²⁾
150
- 55 to + 150
Unit
V
V
V
A
W
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at V_CE = 2 V, I_C = 100 mA
Current Gain Group R
h_FE
180
-
390
-
S
h_FE
270
-
560
-
Collector Base Breakdown Voltage
at I_C = 50 μA
V_(BR)CBO
40
-
-
V
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 50 μA
V_(BR)CEO
20
-
V_(BR)EBO
6
-
-
V
-
V
Collector Cutoff Current
at V_CB = 30 V
Emitter Cutoff Current
at V_EB = 5 V
I_CBO
-
I_EBO
-
-
100
nA
-
100
nA
Collector Emitter Saturation Voltage
at I_C = 2 A, I_B = 100 mA
V_CE(sat)
-
-
0.5
V
Transition Frequency
at V_CE = 2 V, -I_E = 500 mA, f = 100 MHz
Collector Output Capacitance
at V_CE = 10 V, I_E = 0 A, f = 1 MHz
f_T
-
290
-
MHz
C_ob
-
25
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/05/2007