ST-2SC3112 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

ST 2SC3112
NPN Silicon Epitaxial Planar Transistor
for general purpose and switching applications.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1.Emitter 3.Collector 2.Base
TO-92 Plastic Package
Weight approx. 0.19g
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_S
50
50
5
150
30
625
150
- 55 to + 150
V
V
V
mA
mA
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 6 V, I_C = 2 mA
Current Gain Group A
B
Collector Cutoff Current
at V_CB = 50 V
Emitter Cutoff Current
at V_EB = 5 V
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 100 µA
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
Gain Bandwidth Product
at V_CE = 10 V, I_C = 10 mA
Collector Output Capacitance
at V_CB = 10 V, I_E = 0, f = 1 MHz
Symbol Min.
h_FE
600
h_FE
1200
I_CBO
-
I_EBO
-
V_(BR)CBO
50
V_(BR)CEO
50
V_(BR)EBO
5
V_CE(sat)
-
f_T
100
C_ob
-
Typ.
-
-
-
-
-
-
-
-
-
3.5
Max.
1800
3600
100
100
-
-
-
0.25
-
-
Unit
-
-
nA
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/04/2007