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| ST-2SA1020 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Transistor | |||
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ST 2SA1020
PNP Silicon Epitaxial Transistor
Power amplifier application
Power switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
Value
Unit
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
50
50
5
2
900
150
- 55 to + 150
V
V
V
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 2 V, -IC = 0.5 A
at -VCE = 2 V, -IC = 1.5 A
Current Gain Group O hFE
70
-
140
-
Y
hFE
120
-
240
-
hFE
40
-
-
-
Collector Base Cutoff Current
at -VCB = 50 V
-ICBO
-
-
1
µA
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
-
1
µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
50
-
-
V
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 0.05 A
-VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at -IC = 1 A, -IC = 0.05 A
-VBE(sat)
-
-
1.2
V
Transition Frequency
at -VCE = 2 V, -IC = 0.5 A
fT
-
100
-
MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
40
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/12/2008
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